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LED - Chip 26.05.2008 Radiation Green Technology InGaN/Al2O3 EL-525-31-2 rev. 02 Electrodes Both on top side typ. dimensions (m) typ. thickness 100 (10) m p and n contact gold alloy backside metalization gold alloy Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions Forward voltage Forward voltage1 Reverse voltage Radiant power1 Luminous intensity1) Luminous intensity1) Peak wavelength Dominant wavelength Spectral bandwidth at 50% Switching time 1) Symbol Min Typ Max Unit IF = 20 mA IF = 350 mA IR = 10 A IF = 350 mA IF = 20 mA IF = 350 mA IF = 350 mA IF = 350 mA IF = 20 mA IF = 20 mA VF VF VR e V V P D 0.5 tr, tf 5 80 750 7500 505 515 2.8 3.6 3.2 V V V 110 850 9000 515 525 35 50 525 535 mW mcd mcd nm nm nm ns Measured on bare chip with EPIGAP equipment Labeling Type EL-525-31-2 Lot N v(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of ELC-525-31-2 |
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